Taiwan Semiconductor TSM5055DCR

Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM5055DCR

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Specifications

Current - Continuous Drain(Id)20A
RDS(on)14.9mΩ@4.5V
Pd - Power Dissipation69W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)276pF
Input Capacitance(Ciss)2.55nF
Gate Charge(Qg)49nC@10V
Operating Temperature-
Output Capacitance(Coss)388pF

Technical details

20A 14.9mΩ@4.5V 69W 2.5V PDFN-8(5x6) FET, MOSFET Arrays RoHS

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