Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM500P02DCQ RFG
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| Current - Continuous Drain(Id) | 4.7A |
|---|---|
| RDS(on) | 85mΩ@1.8V |
| Pd - Power Dissipation | 620mW |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 1.23nF |
| Gate Charge(Qg) | 13nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | - |
4.7A 85mΩ@1.8V 620mW 800mV 2 P-Channel TDFN-6(2x2) FET, MOSFET Arrays RoHS