Taiwan Semiconductor TSM500P02DCQ

Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM500P02DCQ

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Specifications

Current - Continuous Drain(Id)4.7A
RDS(on)85mΩ@1.8V
Pd - Power Dissipation620mW
Gate Threshold Voltage (Vgs(th))800mV
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Input Capacitance(Ciss)1.23nF
Gate Charge(Qg)13nC@4.5V
Operating Temperature-
Output Capacitance(Coss)-

Technical details

4.7A 85mΩ@1.8V 620mW 800mV TDFN-6(2x2) FET, MOSFET Arrays RoHS

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