Taiwan Semiconductor TSM3911DCX6 RFG

Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM3911DCX6 RFG

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Specifications

Current - Continuous Drain(Id)2.2A
RDS(on)300mΩ@1.8V
Pd - Power Dissipation1.15W
Gate Threshold Voltage (Vgs(th))950mV
Drain to Source Voltage20V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 P-Channel
Input Capacitance(Ciss)882.51pF
Gate Charge(Qg)15.23nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)145.54pF

Technical details

2.2A 300mΩ@1.8V 1.15W 950mV 2 P-Channel SOT-26 FET, MOSFET Arrays RoHS

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