Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM3911DCX6
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| Current - Continuous Drain(Id) | 2.2A |
|---|---|
| RDS(on) | 300mΩ@1.8V |
| Pd - Power Dissipation | 1.15W |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 15.23nC@4.5V |
| Operating Temperature | - |
| Output Capacitance(Coss) | - |
2.2A 300mΩ@1.8V 1.15W 950mV SOT-26 FET, MOSFET Arrays RoHS