Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM300NB06LDCR RLG
No reviews yet — be the first to review Taiwan Semiconductor TSM300NB06LDCR RLG.
| Current - Continuous Drain(Id) | 24A |
|---|---|
| RDS(on) | 39mΩ@4.5V |
| Pd - Power Dissipation | 40W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 966pF |
| Gate Charge(Qg) | 17nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 69pF |
24A 39mΩ@4.5V 40W 2.5V 2 N-Channel PDFNU-8(5x6) FET, MOSFET Arrays RoHS