Taiwan Semiconductor TSM300NB06LDCR

Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM300NB06LDCR

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Specifications

Current - Continuous Drain(Id)24A
Pd - Power Dissipation8W
RDS(on)30mΩ@10V
Gate Threshold Voltage (Vgs(th))2.5V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Input Capacitance(Ciss)-
Gate Charge(Qg)9nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-

Technical details

24A 8W 30mΩ@10V 2.5V PDFNU-8(5x6) FET, MOSFET Arrays RoHS

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