Taiwan Semiconductor TSM300NB06DCR RLG

Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM300NB06DCR RLG

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Specifications

Operating Temperature-55℃~+150℃
Output Capacitance(Coss)68pF
Configuration-
Current - Continuous Drain(Id)25A
RDS(on)42.3mΩ@7V
Pd - Power Dissipation40W
Gate Threshold Voltage (Vgs(th))4.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)16pF
Number2 N-Channel
Input Capacitance(Ciss)1.079nF

Technical details

25A 42.3mΩ@7V 40W 4.5V 2 N-Channel PDFN-8(5x6) FET, MOSFET Arrays RoHS

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