Taiwan Semiconductor TSM2537CQ

Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM2537CQ

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Specifications

Current - Continuous Drain(Id)6.4A
RDS(on)90mΩ@1.8V
Pd - Power Dissipation1.89W
Gate Threshold Voltage (Vgs(th))800mV
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)64pF
Input Capacitance(Ciss)903pF
Gate Charge(Qg)9.3nC@4.5V
Operating Temperature-
Output Capacitance(Coss)82pF

Technical details

6.4A 90mΩ@1.8V 1.89W 800mV TDFN-6(2x2) FET, MOSFET Arrays RoHS

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