Taiwan Semiconductor TSM250N02DCQ RFG

Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM250N02DCQ RFG

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Specifications

Current - Continuous Drain(Id)5.8A
Pd - Power Dissipation620mW
RDS(on)55mΩ@1.8V
Gate Threshold Voltage (Vgs(th))800mV
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)50pF
Number2 N-Channel
Input Capacitance(Ciss)775pF
Gate Charge(Qg)7.7nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)85pF

Technical details

N-Channel Array 20V 5.8A 0.62W Surface Mount TDFN-6(2x2)

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