Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM250N02DCQ
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| Current - Continuous Drain(Id) | 5.8A |
|---|---|
| RDS(on) | 55mΩ@1.8V |
| Pd - Power Dissipation | 620mW |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| Input Capacitance(Ciss) | 775pF |
| Gate Charge(Qg) | 7.7nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 85pF |
5.8A 55mΩ@1.8V 620mW 800mV TDFN-6(2x2) FET, MOSFET Arrays RoHS