Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM200N03DPQ33 RGG
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| Current - Continuous Drain(Id) | 20A |
|---|---|
| RDS(on) | 30mΩ@4.5V |
| Pd - Power Dissipation | 20W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 4.1nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 55pF |
20A 30mΩ@4.5V 20W 2.5V 2 N-Channel PDFN-8(3x3) FET, MOSFET Arrays RoHS