Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM200N03DPQ33
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| Current - Continuous Drain(Id) | 20A |
|---|---|
| Pd - Power Dissipation | 20W |
| RDS(on) | 20mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 4.1nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
20A 20W 20mΩ@10V 2.5V PDFN-8(3x3) FET, MOSFET Arrays RoHS