Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM110NB04LDCR RLG
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| Current - Continuous Drain(Id) | 48A |
|---|---|
| Pd - Power Dissipation | 48W |
| RDS(on) | 16mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.269nF |
| Gate Charge(Qg) | 23nC@10V |
| Operating Temperature | -55℃~+150℃ |
48A 48W 16mΩ@4.5V 2.5V 2 N-Channel PDFN-8(5x6) FET, MOSFET Arrays RoHS