Taiwan Semiconductor TSM085NB03DCR RLG

Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM085NB03DCR RLG

No reviews yet — be the first to review Taiwan Semiconductor TSM085NB03DCR RLG.

Specifications

Current - Continuous Drain(Id)-
Pd - Power Dissipation40W
RDS(on)15mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.5V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)106pF
Input Capacitance(Ciss)1.091nF
Gate Charge(Qg)20nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)176pF

Technical details

40W 15mΩ@4.5V 2.5V PDFNU-8(5x6) FET, MOSFET Arrays RoHS

Related FETs & Power MOSFETs