Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM085NB03DCR
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| Current - Continuous Drain(Id) | 51A |
|---|---|
| RDS(on) | 15mΩ@4.5V |
| Pd - Power Dissipation | 40W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 106pF |
| Input Capacitance(Ciss) | 1.091nF |
| Gate Charge(Qg) | 20nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 176pF |
51A 15mΩ@4.5V 40W 2.5V PDFNU-8(5x6) FET, MOSFET Arrays RoHS