Taiwan Semiconductor · FETs & Power MOSFETs · MPN TSM076NH04LDCR RLG
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| Current - Continuous Drain(Id) | 65A |
|---|---|
| RDS(on) | 10.6mΩ@4.5V |
| Pd - Power Dissipation | 55.6W |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Drain to Source Voltage | 40V |
| Type | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | - |
| Input Capacitance(Ciss) | 1.344nF |
| Gate Charge(Qg) | 22.4nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 248pF |
65A 10.6mΩ@4.5V 55.6W 2.2V PDFNU-8(5x6) FET, MOSFET Arrays RoHS