Taiwan Semiconductor · FETs & Power MOSFETs · MPN TQM110NB04DCR RLG
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| Current - Continuous Drain(Id) | 50A |
|---|---|
| Pd - Power Dissipation | 58W |
| RDS(on) | 17.2mΩ@7V |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.354nF |
| Gate Charge(Qg) | 26nC@10V |
| Operating Temperature | -55℃~+175℃ |
50A 58W 17.2mΩ@7V 3.8V 2 N-Channel PDFNU-8(5x6) FET, MOSFET Arrays RoHS