Taiwan Semiconductor TQM076NH04LDCR RLG

Taiwan Semiconductor · FETs & Power MOSFETs · MPN TQM076NH04LDCR RLG

No reviews yet — be the first to review Taiwan Semiconductor TQM076NH04LDCR RLG.

Specifications

Current - Continuous Drain(Id)64A
Pd - Power Dissipation55.6W
RDS(on)10.6mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.2V
Reverse Transfer Capacitance (Crss@Vds)80pF
Input Capacitance(Ciss)2.006nF
Gate Charge(Qg)16nC@4.5V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)484pF

Technical details

64A 55.6W 10.6mΩ@4.5V 2.2V PDFN-8(5x6) FET, MOSFET Arrays RoHS

Related FETs & Power MOSFETs