Taiwan Semiconductor · FETs & Power MOSFETs · MPN TQM076NH04LDCR RLG
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| Current - Continuous Drain(Id) | 64A |
|---|---|
| Pd - Power Dissipation | 55.6W |
| RDS(on) | 10.6mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| Input Capacitance(Ciss) | 2.006nF |
| Gate Charge(Qg) | 16nC@4.5V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 484pF |
64A 55.6W 10.6mΩ@4.5V 2.2V PDFN-8(5x6) FET, MOSFET Arrays RoHS