Taiwan Semiconductor TQM076NH04DCR RLG

Taiwan Semiconductor · FETs & Power MOSFETs · MPN TQM076NH04DCR RLG

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Specifications

Current - Continuous Drain(Id)64A
RDS(on)9.1mΩ@7V
Pd - Power Dissipation55.6W
Gate Threshold Voltage (Vgs(th))3.6V
Type-
Reverse Transfer Capacitance (Crss@Vds)62pF
Input Capacitance(Ciss)1.85nF
Gate Charge(Qg)29nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)470pF

Technical details

64A 9.1mΩ@7V 55.6W 3.6V PDFNU-8(5x6) FET, MOSFET Arrays RoHS

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