SUPSiC · FETs & Power MOSFETs · MPN GC3M0280090D
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| Gate Charge(Qg) | 9.7nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 900V |
| Current - Continuous Drain(Id) | 10.2A |
| Output Capacitance(Coss) | 26pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 45W |
| RDS(on) | 320mΩ@15V |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 204pF |
N-Channel 900V 10.2A 45W Through Hole TO247-3