SUPSiC GC3M0160120D

SUPSiC · FETs & Power MOSFETs · MPN GC3M0160120D

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Specifications

Gate Charge(Qg)38nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)39pF
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation97W
RDS(on)160mΩ@15V
Reverse Transfer Capacitance (Crss@Vds)3pF
Number1 N-channel
Input Capacitance(Ciss)632pF
TypeN-Channel

Technical details

N-Channel 1.2kV 17A 97W Through Hole TO-247-3

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