SUPSiC GC3M0120100K

SUPSiC · FETs & Power MOSFETs · MPN GC3M0120100K

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Specifications

Gate Charge(Qg)22nC
Drain to Source Voltage1kV
Output Capacitance(Coss)48pF
Current - Continuous Drain(Id)22A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation83W
RDS(on)120mΩ@15V
Reverse Transfer Capacitance (Crss@Vds)3pF
Number1 N-channel
Input Capacitance(Ciss)414pF
TypeN-Channel

Technical details

N-Channel 1kV 22A 83W Through Hole TO247-4

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