SUPSiC · FETs & Power MOSFETs · MPN GC3M0120090D
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| Gate Charge(Qg) | 21nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 900V |
| Output Capacitance(Coss) | 48pF |
| Current - Continuous Drain(Id) | 23A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 97W |
| RDS(on) | 120mΩ@15V |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 414pF |
N-Channel 900V 23A 97W Through Hole TO-247-3