SUPSiC GC3M0080120K

SUPSiC · FETs & Power MOSFETs · MPN GC3M0080120K

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Specifications

Gate Charge(Qg)53nC
Configuration-
Drain to Source Voltage1.2kV
Output Capacitance(Coss)58pF
Current - Continuous Drain(Id)36A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation136W
RDS(on)90mΩ
Reverse Transfer Capacitance (Crss@Vds)2pF
Number1 N-channel
Input Capacitance(Ciss)1.39nF

Technical details

N-Channel 1.2kV 36A 136W Through Hole TO-247-4

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