SUPSiC GC3M0075120D

SUPSiC · FETs & Power MOSFETs · MPN GC3M0075120D

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Specifications

Gate Charge(Qg)54nC
Configuration-
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)32A
Output Capacitance(Coss)58pF
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation136W
RDS(on)75mΩ@15V
Reverse Transfer Capacitance (Crss@Vds)2pF
Number1 N-channel
Input Capacitance(Ciss)1.39nF

Technical details

N-Channel 1.2kV 32A 136W Through Hole TO247-3

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