SUPSiC GC3M0065100K

SUPSiC · FETs & Power MOSFETs · MPN GC3M0065100K

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Specifications

Gate Charge(Qg)37nC
Configuration-
Drain to Source Voltage1kV
Current - Continuous Drain(Id)32A
Output Capacitance(Coss)70pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation113.5W
RDS(on)65mΩ@15V
Reverse Transfer Capacitance (Crss@Vds)5pF
Number1 N-channel
Input Capacitance(Ciss)760pF

Technical details

N-Channel 1kV 32A 113.5W Through Hole TO-247-4

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