SUPSiC GC3M0060065D

SUPSiC · FETs & Power MOSFETs · MPN GC3M0060065D

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Specifications

Gate Charge(Qg)46nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)29A
Output Capacitance(Coss)80pF
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation150W
RDS(on)60mΩ@15V
Reverse Transfer Capacitance (Crss@Vds)9pF
Number1 N-channel
Input Capacitance(Ciss)1.02nF
TypeN-Channel

Technical details

N-Channel 650V 29A 150W Through Hole TO247-3

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