SUPSiC GC3M0040120K

SUPSiC · FETs & Power MOSFETs · MPN GC3M0040120K

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Specifications

Gate Charge(Qg)164nC
Configuration-
Drain to Source Voltage1.2kV
Output Capacitance(Coss)103pF
Current - Continuous Drain(Id)66A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation326W
RDS(on)40mΩ@15V
Reverse Transfer Capacitance (Crss@Vds)5pF
Number1 N-channel
Input Capacitance(Ciss)2.9nF

Technical details

N-Channel 1.2kV 66A 326W Through Hole TO-247-4

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