SUPSiC GC3M0032120K

SUPSiC · FETs & Power MOSFETs · MPN GC3M0032120K

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Specifications

Gate Charge(Qg)118nC
Configuration-
Drain to Source Voltage1.2kV
Output Capacitance(Coss)129pF
Current - Continuous Drain(Id)63A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation283W
RDS(on)32mΩ@15V
Reverse Transfer Capacitance (Crss@Vds)8pF
Number1 N-channel
Input Capacitance(Ciss)3.357nF

Technical details

N-Channel 1.2kV 63A 283W Through Hole TO-247-4

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