SUPSiC GC3M0021120D

SUPSiC · FETs & Power MOSFETs · MPN GC3M0021120D

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Specifications

Gate Charge(Qg)160nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)81A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation469W
RDS(on)21mΩ@15V
Reverse Transfer Capacitance (Crss@Vds)12pF
Number1 N-channel
Input Capacitance(Ciss)4.818nF
TypeN-Channel

Technical details

N-Channel 1.2kV 81A 469W Through Hole TO247-3

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