SUPSiC · FETs & Power MOSFETs · MPN GC3M0016120D
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| Gate Charge(Qg) | 207nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 230pF |
| Current - Continuous Drain(Id) | 115A |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 556W |
| RDS(on) | 16mΩ@15V |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.085nF |
| Type | N-Channel |
N-Channel 1.2kV 115A 556W Through Hole TO247-3