SUPSiC · FETs & Power MOSFETs · MPN GC3M0015065K
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| Gate Charge(Qg) | 188nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 120A |
| Output Capacitance(Coss) | 289pF |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 416W |
| RDS(on) | 15mΩ@15V |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.011nF |
| Type | N-Channel |
N-Channel 650V 120A 416W Through Hole TO-247-4