SUPSiC · FETs & Power MOSFETs · MPN GC2M0280120D
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| Gate Charge(Qg) | 19nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 31pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.1V |
| Pd - Power Dissipation | 69.4W |
| RDS(on) | 320mΩ@20V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 267pF |
N-Channel 1.2kV 11A 69.4W Through Hole TO247-3