SUPSiC · FETs & Power MOSFETs · MPN GC2M0160120D
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| Gate Charge(Qg) | 40nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 58pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Pd - Power Dissipation | 125W |
| RDS(on) | 160mΩ@20V |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 606pF |
N-Channel 1.2kV 18A 125W Through Hole TO-247-3