SUPSiC GC2M0080120K

SUPSiC · FETs & Power MOSFETs · MPN GC2M0080120K

No reviews yet — be the first to review SUPSiC GC2M0080120K.

Specifications

Gate Charge(Qg)71nC
Configuration-
Drain to Source Voltage1.2kV
Output Capacitance(Coss)92pF
Current - Continuous Drain(Id)36A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation192W
RDS(on)98mΩ
Reverse Transfer Capacitance (Crss@Vds)7.5pF
Number1 N-channel
Input Capacitance(Ciss)1.13nF

Technical details

N-Channel 1.2kV 36A 192W Through Hole TO-247-4

Related FETs & Power MOSFETs