SUPSiC GC2M0080120D1

SUPSiC · FETs & Power MOSFETs · MPN GC2M0080120D1

No reviews yet — be the first to review SUPSiC GC2M0080120D1.

Specifications

Gate Charge(Qg)71nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)92pF
Current - Continuous Drain(Id)34A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation190W
Reverse Transfer Capacitance (Crss@Vds)7.5pF
RDS(on)80mΩ
Number1 N-channel
Input Capacitance(Ciss)1.13nF
TypeN-Channel

Technical details

N-Channel 1.2kV 34A 190W Through Hole TO-247-3

Related FETs & Power MOSFETs