SUPSiC GC2M0045170D

SUPSiC · FETs & Power MOSFETs · MPN GC2M0045170D

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Specifications

Gate Charge(Qg)188nC
Configuration-
Drain to Source Voltage1.7kV
Output Capacitance(Coss)176pF
Current - Continuous Drain(Id)72A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation520W
RDS(on)45mΩ@20V
Reverse Transfer Capacitance (Crss@Vds)6.7pF
Number1 N-channel
Input Capacitance(Ciss)3.672nF

Technical details

N-Channel 1.7kV 72A 520W Through Hole TO247-3

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