SUPSiC GC2M0040120D

SUPSiC · FETs & Power MOSFETs · MPN GC2M0040120D

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Specifications

Gate Charge(Qg)120nC
Configuration-
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)55A
Output Capacitance(Coss)171pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.2V
Pd - Power Dissipation278W
RDS(on)80mΩ@20V
Reverse Transfer Capacitance (Crss@Vds)11pF
Number1 N-channel
Input Capacitance(Ciss)2.44nF

Technical details

N-Channel 1.2kV 55A 278W Through Hole TO-247-3

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