SUPSiC GC2M0025120D

SUPSiC · FETs & Power MOSFETs · MPN GC2M0025120D

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Specifications

Gate Charge(Qg)194nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)224pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation378W
RDS(on)25mΩ@20V
Reverse Transfer Capacitance (Crss@Vds)9pF
Number1 N-channel
Input Capacitance(Ciss)3.14nF
TypeN-Channel

Technical details

N-Channel 1.2kV 90A 378W Through Hole TO-247-3

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