STANSON Tech. STP413D

STANSON Tech. · FETs & Power MOSFETs · MPN STP413D

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Specifications

Gate Charge(Qg)16.5nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)36mΩ@10V;52mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)900pF
TypeP-Channel

Technical details

P-Channel 40V 12A 50W Surface Mount TO-252

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