STANSON Tech. STN8882D

STANSON Tech. · FETs & Power MOSFETs · MPN STN8882D

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Specifications

Gate Charge(Qg)54nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)683.3pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)374.9pF
RDS(on)6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.826nF
TypeN-Channel

Technical details

N-Channel 30V 80A 55W Surface Mount TO-252

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