STANSON Tech. STC6301D

STANSON Tech. · FETs & Power MOSFETs · MPN STC6301D

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Specifications

Gate Charge(Qg)12.6nC@4.5V;9.9nC@4.5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)23A;18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation34.7W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)45mΩ@10V;60mΩ@10V;28mΩ@4.5V;65mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)-
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 60V 23A 34.7W Surface Mount TO-252-4

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