ST · FETs & Power MOSFETs · MPN VND7NV04-E
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | - |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
40V 60W 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS