ST VND7NV04-E

ST · FETs & Power MOSFETs · MPN VND7NV04-E

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Specifications

Configuration-
Gate Charge(Qg)-
Drain to Source Voltage40V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

40V 60W 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS

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