ST · FETs & Power MOSFETs · MPN STY60NM50
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| Gate Charge(Qg) | 266nC@400V |
|---|---|
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 980pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 560W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 45mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.5nF |
| Type | N-Channel |
N-Channel 500V 60A 560W Through Hole TO-247-3