ST STY60NM50

ST · FETs & Power MOSFETs · MPN STY60NM50

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Specifications

Gate Charge(Qg)266nC@400V
Drain to Source Voltage500V
Output Capacitance(Coss)980pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation560W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)45mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.5nF
TypeN-Channel

Technical details

N-Channel 500V 60A 560W Through Hole TO-247-3

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