ST STY60NK30Z

ST · FETs & Power MOSFETs · MPN STY60NK30Z

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Specifications

Gate Charge(Qg)220nC@240V
Drain to Source Voltage300V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation450W
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)45mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.2nF
TypeN-Channel

Technical details

300V 60A 4.5V 450W 45mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

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