ST STY145N65M5

ST · FETs & Power MOSFETs · MPN STY145N65M5

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Specifications

Gate Charge(Qg)414nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)413pF
Current - Continuous Drain(Id)138A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation625W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)18.5nF
TypeN-Channel

Technical details

N-Channel 650V 138A 625W Through Hole TO-247-3

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