ST · FETs & Power MOSFETs · MPN STY139N65M5
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| Gate Charge(Qg) | 363nC@520V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 130A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 625W |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 17mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 15.6nF |
650V 130A 3V 625W 17mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS