ST · FETs & Power MOSFETs · MPN STY112N65M5
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 350nC@10V |
| Output Capacitance(Coss) | 365pF |
| Current - Continuous Drain(Id) | 96A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 625W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 22mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 16.87nF |
| Type | N-Channel |
650V 96A 5V 625W 22mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS