ST STY105NM50N

ST · FETs & Power MOSFETs · MPN STY105NM50N

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Specifications

Gate Charge(Qg)326nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)500pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation625W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)22mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.6nF
TypeN-Channel

Technical details

N-Channel 500V 110A 625W Through Hole TO-247-3

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